? semiconductor components industries, llc, 2009 august, 2009 ? rev. 1 1 publication order number: nss60200l/d nss60200lt1g 60 v, 4.0 a, low v ce(sat) pnp transistor on semiconductor?s e 2 poweredge family of low v ce(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (v ce(sat) ) and high current gain capability. these are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. typical applications are dc ? dc converters and power management in portable and battery powered products such as cellular and cordless phones, pdas, computers, printers, digital cameras and mp3 players. other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. in the automotive industry they can be used in air bag deployment and in the instrument cluster. the high current gain allows e 2 poweredge devices to be driven directly from pmu?s control outputs, and the linear gain (beta) makes them ideal components in analog amplifiers. ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings (t a = 25 c) rating symbol max unit collector-emitter voltage v ceo ? 60 vdc collector-base voltage v cbo ? 80 vdc emitter-base voltage v ebo ? 7.0 vdc collector current ? continuous i c ? 2.0 a collector current ? peak i cm ? 4.0 a thermal characteristics characteristic symbol max unit total device dissipation t a = 25 c derate above 25 c p d (note 1) 460 3.7 mw mw/ c thermal resistance, junction ? to ? ambient r ja (note 1) 270 c/w total device dissipation t a = 25 c derate above 25 c p d (note 2) 540 4.3 mw mw/ c thermal resistance, junction ? to ? ambient r ja (note 2) 230 c/w junction and storage temperature range t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 4 @ 100 mm 2 , 1 oz. copper traces. 2. fr ? 4 @ 500 mm 2 , 1 oz. copper traces. device package shipping ? ordering information nss60200lt1g sot ? 23 (pb ? free) 3000/tape & reel marking diagram collector 3 1 base 2 emitter sot ? 23 (to ? 236) case 318 style 6 3 2 1 http://onsemi.com ? 60 volts, 4.0 amps pnp low v ce(sat) transistor equivalent r ds(on) 80 m ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. 1 vg m vg = specific device code m = date code* = pb ? free package *date code orientation and/or overbar may vary depending upon manufacturing location. (note: microdot may be in either location)
nss60200lt1g http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = ? 10 madc, i b = 0) v (br)ceo ? 60 ? ? vdc collector ? base breakdown voltage (i c = ? 0.1 madc, i e = 0) v (br)cbo ? 80 ? ? vdc emitter ? base breakdown voltage (i e = ? 0.1 madc, i c = 0) v (br)ebo ? 7.0 ? ? vdc collector cutoff current (v cb = ? 60 vdc, i e = 0) i cbo ? ? ? 0.1 adc emitter cutoff current (v eb = ? 6.0 vdc) i ebo ? ? ? 0.1 adc on characteristics dc current gain (note 3) (i c = ? 10 ma, v ce = ? 2.0 v) (i c = ? 500 ma, v ce = ? 2.0 v) (i c = ? 1.0 a, v ce = ? 2.0 v) (i c = ? 2.0 a, v ce = ? 2.0 v) h fe 150 150 100 100 ? 300 ? ? ? ? ? ? collector ? emitter saturation voltage (note 3) (i c = ? 0.1 a, i b = ? 0.010 a) (i c = ? 1.0 a, i b = ? 0.100 a) (i c = ? 1.0 a, i b = ? 0.010 a) (i c = ? 2.0 a, i b = ? 0.200 a) v ce(sat) ? ? ? ? ? 0.017 ? 0.095 ? 0.180 ? 0.170 ? 0.030 ? 0.120 ? 0.270 ? 0.220 v base ? emitter saturation voltage (note 3) (i c = ? 1.0 a, i b = ? 0.010 a) v be(sat) ? ? ? 0.900 v base ? emitter turn ? on voltage (note 3) (i c = ? 1.0 a, v ce = ? 2.0 v) v be(on) ? ? ? 0.850 v cutoff frequency (i c = ? 100 ma, v ce = ? 5.0 v, f = 100 mhz) f t 100 ? ? mhz input capacitance (v eb = 0.5 v, f = 1.0 mhz) cibo ? ? 325 pf output capacitance (v cb = 3.0 v, f = 1.0 mhz) cobo ? ? 62 pf switching characteristics delay (v cc = ? 30 v, i c = 750 ma, i b1 = 15 ma) t d ? ? 60 ns rise (v cc = ? 30 v, i c = 750 ma, i b1 = 15 ma) t r ? ? 120 ns storage (v cc = ? 30 v, i c = 750 ma, i b1 = 15 ma) t s ? ? 400 ns fall (v cc = ? 30 v, i c = 750 ma, i b1 = 15 ma) t f ? ? 130 ns 3. pulsed condition: pulse width = 300 msec, duty cycle 2%.
nss60200lt1g http://onsemi.com 3 ? 55 c v ce(sat) = 150 c ic/ib = 10 25 c figure 1. collector emitter saturation voltage vs. collector current figure 2. collector emitter saturation voltage vs. collector current i c , collector current (a) 10 1.0 0.1 0.01 0.001 0 0.05 0.1 0.15 0.2 figure 3. dc current gain vs. collector current figure 4. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 10 1.0 0.1 0.01 0.001 50 150 300 350 10 1.0 0.1 0.01 0.001 0.3 0.4 0.5 0.6 0.7 0.8 1.0 1.1 figure 5. base emitter saturation voltage vs. collector current figure 6. base emitter turn ? on voltage vs. collector current i c , collector current (a) 10 1.0 0.1 0.01 0.001 0.2 0.3 0.4 0.5 0.8 0.9 1.0 v ce(sat) , collector emitter saturation voltage (v) h fe , dc current gain v be(sat) , base emitter saturation voltage (v) v be(on) , base emitter turn ? on voltage (v) ic/ib = 100 25 c ? 55 c i c , collector current (a) 10 1.0 0.1 0.01 0.001 0 0.05 0.10 0.15 0.20 0.35 v ce(sat) , collector emitter saturation voltage (v) v ce(sat) = 150 c 0.25 0.30 200 250 400 0.9 150 c (5.0 v) 150 c (2.0 v) 25 c (5.0 v) 25 c (2.0 v) ? 55 c (5.0 v) ? 55 c (2.0 v) 25 c ? 55 c 150 c 0.6 0.7 25 c ? 55 c 150 c v ce = ? 2.0 v ic/ib = 10 i c , collector current (a) 10 1.0 0.1 0.01 0.001 0.3 0.4 0.5 0.6 0.7 0.8 1.0 0.2 v be(sat) , base emitter saturation voltage (v) 0.9 25 c ? 55 c 150 c ic/ib = 100 0.50 0.40 0.45 100
nss60200lt1g http://onsemi.com 4 10 ms 100 ms 1 s thermal limit 1 ms c ibo (pf) figure 7. saturation region figure 8. input capacitance v eb , emitter base voltage (v) 4.0 3.0 2.0 1.0 0 375 150 300 325 figure 9. output capacitance v ce (v dc ) 100 1.0 0.1 0.001 0.1 10 c ibo , input capacitance (pf) i c (a) v cb , collector base voltage (v) 35 15 10 0 20 70 50 80 c obo , output capacitance (pf) 90 6.0 5.0 200 225 250 275 175 c obo (pf) 5.0 30 25 20 1.0 10 60 350 30 40 i b , base current (ma) 100 10 1.0 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 v ce , collector ? emitter voltage (v) v ce (v) i c = 500 ma 300 ma 10 ma 100 ma figure 10. safe operating area 25 75 55 85 65 35 45 0.01 single pulse test at t amb = 25 c
nss60200lt1g http://onsemi.com 5 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue an style 6: pin 1. base 2. emitter 3. collector mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318 ? 01 thru ? 07 and ? 09 obsolete, new standard 318 ? 08. view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 nss60200l/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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